发明名称 |
Methods for forming shallow trench isolation structures in semiconductor devices |
摘要 |
Methods for forming STI structures in semiconductor devices are disclosed. A disclosed method comprises: forming a buffer oxide layer on a silicon substrate; implanting ions into the entire surface of the resulting structure and removing the buffer oxide layer; depositing a gate oxide layer, a polysilicon layer and a nitride layer, forming a photoresist pattern; forming the trench of the STI structure by perform an etching process using the photoresist pattern as an etching mask; forming a thin oxide layer inside the trench and on the nitride layer on the entire surface of the resulting structure; filling the trench with an insulating layer; planarizing the insulating layer by performing a CMP process using the nitride layer as an etching stop layer; performing a recessing process to etch the planarized insulating layer and the thin oxide layer on the trench to a predetermined depth; forming a photoresist pattern on the nitride layer; and forming the gate electrodes by performing an etching process using the photoresist pattern as a mask pattern.
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申请公布号 |
US7148117(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20040026232 |
申请日期 |
2004.12.29 |
申请人 |
DONGBU ELECTRONICS, CO., LTD. |
发明人 |
SEO YOUNG HUN |
分类号 |
H01L21/20;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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