发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device having a structure miniaturizable through simple fabrication steps and a method of fabricating a semiconductor device capable of remarkably improving production efficiency are obtained. The semiconductor device comprises a semiconductor chip including a semiconductor circuit having a prescribed function and an electrode on one main surface, a wire having a first end connected with the electrode and a second end having a connecting terminal connected to an external device and an insulator sealing at least the main surface of the semiconductor chip. The connecting terminal provided on the second end of the wire is a part formed while keeping a state integrated with the remaining part of the wire, and exposed on a bottom surface opposite to the upper surface of the insulator closer to the main surface.
申请公布号 US7148576(B2) 申请公布日期 2006.12.12
申请号 US20050150296 申请日期 2005.06.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 NEMOTO YOSHIHIKO
分类号 H01L23/12;H01L23/48;H01L21/56;H01L21/60;H01L21/68;H01L23/31;H01L23/485;H01L23/52;H01L25/10;H01L25/11;H01L25/18;H01L29/40 主分类号 H01L23/12
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