Power semiconductor device and power semiconductor module

摘要

A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.