| 摘要 |
<p>An organic thin film transistor, a method for manufacturing the same, and a flat display apparatus comprising the same are provided to prevent a short error of a channel by filling an opening with a conductive material. Source/drain wires(130a,130b) and a gate electrode(120) are formed on a substrate(110). A gate insulating layer(140) is formed on the source/drain wires and the gate electrode. The gate insulating layer includes openings(160a,160b) having predetermined patterns for exposing the source/drain wires. Conductive materials(170a,170b) are in contact with the source/drain wires through the openings. An organic semiconductor layer(150) is electrically connected with the conductive materials.</p> |
