METHOD OF CRYSTALLIZING SEMICONDUCTOR AND POLYCRYSTALLINE SEMICONDUCTOR TFT

摘要

A method for crystallizing a semiconductor and a polycrystalline semiconductor TFT are provided to crystallize amorphous silicon as polycrystalline silicon by using an energy absorbing layer. An energy absorbing layer(30) is formed on an upper surface of a metal substrate(10). An amorphous semiconductor layer is formed on an upper surface of the energy absorbing layer. The amorphous semiconductor layer is crystallized as a polycrystalline semiconductor layer by using laser beams. The energy absorbing layer is used for absorbing laser energy. The laser beam method is an excimer laser annealing method or a sequential lateral solidification method.