发明名称 |
Set programming methods and write driver circuits for a phase-change memory array |
摘要 |
Exemplary embodiments of the present invention provide set programming methods and write driver circuits for a phase-change memory array. An exemplary embodiment of a set programming method may comprise applying a set current pulse to the phase-change cells, which may cause phase-change cells, which may be included within the phase-change memory array, to transition to the set resistance state. Exemplary embodiments of the set programming methods and/or write driver circuits may result in the phase-change cells to transition to the set resistance state.
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申请公布号 |
US7149103(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20040018354 |
申请日期 |
2004.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN SU-JIN |
分类号 |
G11C11/56;G11C13/00;G11C7/00;G11C11/00;G11C11/4193;G11C11/4197;G11C13/02;G11C16/02 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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