| 摘要 |
Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.
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