| 摘要 |
A method of fabricating a non-volatile memory is described. A substrate having a memory cell region and a peripheral circuit region is provided. A plurality of first stacked gate structures is formed on the memory cell region and a stacked structure is formed on the peripheral circuit region. A conductive layer is formed on the substrate to form a plurality of gates between the first stacked gate structures, thereby forming a memory cell row. A plurality of conductive spacers is formed on the sidewalls of the memory cell row and the stacked structure. A patterned mask layer is formed on the substrate to cover at least the memory cell row and the conductive spacers. The stacked structure is patterned to form a plurality of second stacked gate structures on the peripheral circuit region.
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