| 摘要 |
A metal film made of a metal material (e.g., NiFe, CoFeNi, or FeCo) including an iron atom is formed on a substrate (S 101 ). Subsequently, the metal film formed on the substrate is plasma-processed in an environment including a gas (e.g., an oxygen gas having a tetrafluoromethane or trifluoromethane gas added thereto) containing oxygen and fluorine atoms (S 103 ). Then, a resist material (e.g., a chemically amplified positive resist material) is applied onto the plasma-processed metal film, so as to form a resist film (S 105 ). Thereafter, the resist film is partly removed, so as to expose a part of the surface of metal film in conformity to a desirable pattern, thereby forming a resist frame (S 107 ).
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