发明名称 |
Semiconductor device with isolated storage capacitor and its manufacturing method |
摘要 |
A first semiconductor layer that makes a capacitance coupling with a gate electrode of a thin film transistor through a gate insulating layer and a second semiconductor layer that makes a capacitance coupling with a storage capacitor line of a storage capacitor through the gate insulating layer are formed separately. Also, the first semiconductor layer and the second semiconductor layer are connected by a metal wiring. The gate electrode of the thin film transistor makes capacitance coupling with the first semiconductor layer and the storage capacitor line of the storage capacitor makes capacitance coupling with the second semiconductor layer independently. Voltage are induced in the first semiconductor layer and the second semiconductor layer independently. Since there will be no big discrepancy in voltage in the gate insulating layer, the dielectric break down and the leakage can be prevented.
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申请公布号 |
US7148545(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20030705223 |
申请日期 |
2003.11.12 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SEGAWA YASUO;AOTA MASAAKI;YAMADA TSUTOMU |
分类号 |
H01L27/12;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/13;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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