发明名称 |
Semiconductor on insulator device architecture and method of construction |
摘要 |
An SOI architecture is provided that comprises an inner substrate 10 which has a buried conductor layer 12 formed on an outer surface thereof. A bonding layer 14 is used to provide a cohesive bond with a buried insulator layer 18. The semiconductor device layer 20 is formed on the outer surface of buried insulator layer 18. An inductive well 22 can be formed to provide a platform for the formation of inductive devices 34 within an inductive region 26.
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申请公布号 |
US7148121(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20030628148 |
申请日期 |
2003.07.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W. |
分类号 |
H01L21/30;H01L21/02;H01L21/84;H01L27/12 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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