发明名称 |
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same |
摘要 |
In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.
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申请公布号 |
US7148110(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20060415466 |
申请日期 |
2006.05.01 |
申请人 |
SAMSUNG ELECTRONICS. CO., LTD. |
发明人 |
JEON HEE-SEOG;YOON SEUNG-BEOM;KIM YONG-TAE |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L21/8234;H01L21/8246;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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