| 摘要 |
The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical semiconductor chips or devices comprising GaN, GaInP, and GaInNP based LEDs with higher crystal quality, higher throughput, higher yield, and lower cost. The methods comprise the following process steps in the order presented: growing a first-type cladding layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing an electrically conductive supporting plate, removing the original substrate and the first-type cladding layer exposed, growing an epitaxial layer comprising an active layer and a second-type cladding layer, disposing a second-electrode, and dicing into individual dies.
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