| 摘要 |
A biasing circuit for use in a non-volatile memory device is coupled to the row decoder and to the column decoder to supply a first and at least a second biasing voltage for the word and bit lines, and includes a first voltage booster having a first input coupled to receive a supply voltage, a second input coupled to receive a reference voltage, and an output coupled to one of the row decoder and the column decoder to supply the first biasing voltage. A second voltage booster has a first input coupled to receive the supply voltage, a second input coupled to the output of the first voltage booster to receive the first biasing voltage, and an output coupled to the other of the row decoder and the column decoder to supply the second biasing voltage.
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