发明名称 |
Charge pump element with body effect cancellation for early charge pump stages |
摘要 |
A charge pump stage comprising a pulse train which injects energy into a gate of a charge transfer transistor of the charge pump stage, wherein a modified output of the pulse train is input to a bulk of the charge transfer transistor such that a bulk voltage of the charge transfer transistor is raised to a level not greater than the minimum of a source voltage and a drain voltage of that charge transfer transistor. A method for operating the charge pump stage is also disclosed.
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申请公布号 |
US7148739(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20020322491 |
申请日期 |
2002.12.19 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
SHOR JOSEPH S.;MAAYAN EDUARDO |
分类号 |
G05F3/02;H02M3/07 |
主分类号 |
G05F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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