发明名称 Charge pump element with body effect cancellation for early charge pump stages
摘要 A charge pump stage comprising a pulse train which injects energy into a gate of a charge transfer transistor of the charge pump stage, wherein a modified output of the pulse train is input to a bulk of the charge transfer transistor such that a bulk voltage of the charge transfer transistor is raised to a level not greater than the minimum of a source voltage and a drain voltage of that charge transfer transistor. A method for operating the charge pump stage is also disclosed.
申请公布号 US7148739(B2) 申请公布日期 2006.12.12
申请号 US20020322491 申请日期 2002.12.19
申请人 SAIFUN SEMICONDUCTORS LTD. 发明人 SHOR JOSEPH S.;MAAYAN EDUARDO
分类号 G05F3/02;H02M3/07 主分类号 G05F3/02
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