发明名称 |
Defect inspection apparatus, program, and manufacturing method of semiconductor device |
摘要 |
A defect inspection apparatus includes a charged particle beam source which emits a charged particle beam to illuminate the charged particle beam onto a sample as a primary beam; an image pickup which includes an imaging element having a light receiving face receiving at least one of a secondary charged particle, a reflective charged particle, and a back-scattered charged particle generated from the sample by the illumination of the primary beam and which outputs a signal indicating a state of the surface of the sample; a mapping projection system which maps/projects at least one of the secondary charged particle, the reflective charged particle, and the back-scattered charged particle as a secondary beam and which makes the beam to form an image on the light receiving face of the imaging element; a controller which adjusts a beam diameter of the primary beam in such a manner as to apply the beam to the sample with a size smaller than that of an imaging region as a target of review to scan the imaging region and which allows the image pickup to pick up a plurality of frame images; an image processor which processes the plurality of obtained frame images to prepare a review image; and a defect judgment unit which judges a defect of the sample based on the review image.
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申请公布号 |
US7148479(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20050086212 |
申请日期 |
2005.03.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ONISHI ATSUSHI;YAMAZAKI YUICHIRO;NAGAHAMA ICHIROTA |
分类号 |
G01B15/00;H01J37/256;G01B15/08;G01N23/225;G06T1/00;G06T3/00;H01J37/28;H01L21/66 |
主分类号 |
G01B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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