发明名称 Defect inspection apparatus, program, and manufacturing method of semiconductor device
摘要 A defect inspection apparatus includes a charged particle beam source which emits a charged particle beam to illuminate the charged particle beam onto a sample as a primary beam; an image pickup which includes an imaging element having a light receiving face receiving at least one of a secondary charged particle, a reflective charged particle, and a back-scattered charged particle generated from the sample by the illumination of the primary beam and which outputs a signal indicating a state of the surface of the sample; a mapping projection system which maps/projects at least one of the secondary charged particle, the reflective charged particle, and the back-scattered charged particle as a secondary beam and which makes the beam to form an image on the light receiving face of the imaging element; a controller which adjusts a beam diameter of the primary beam in such a manner as to apply the beam to the sample with a size smaller than that of an imaging region as a target of review to scan the imaging region and which allows the image pickup to pick up a plurality of frame images; an image processor which processes the plurality of obtained frame images to prepare a review image; and a defect judgment unit which judges a defect of the sample based on the review image.
申请公布号 US7148479(B2) 申请公布日期 2006.12.12
申请号 US20050086212 申请日期 2005.03.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ONISHI ATSUSHI;YAMAZAKI YUICHIRO;NAGAHAMA ICHIROTA
分类号 G01B15/00;H01J37/256;G01B15/08;G01N23/225;G06T1/00;G06T3/00;H01J37/28;H01L21/66 主分类号 G01B15/00
代理机构 代理人
主权项
地址