| 摘要 |
The invention relates to a high voltage depletion layer field effect transistor comprising a first trough (11) having a first type of conductivity in a substrate (10) of a second type of conductivity, a source (14) and a drain (15) arranged in a first trough respectively having the first type of conductivity, and a gate (16) having the second type of conductivity, which is arranged in a second trough (12) of the second type of conductivity. The second trough is of the retrograde type. The elements source, gate and drain are arranged at a distance from each other by means of the field oxide regions (13a to 13d). Field plates (17a, 17b) extend from the gate (16) in the direction of the source and drain over the field oxide (13a, 13b).
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