发明名称 |
DISPOSITIF CAPTEUR DE PRESSION A SEMICONDUCTEUR |
摘要 |
A semiconductor pressure sensor device has a fully-filling gel structure including a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure. This sensor chip of the sensor device is connected with a conductive member such as a terminal using a bonding wire. The sensor chip and bonding wire are covered by a protective member that has characteristics of electric insulation and plasticity. Here, the bonding wire is formed of an alloy of Au and Pd. This structure using a bonding wire of an Au-Pd alloy enables wire strength to be enhanced without the wire diameter being largely increased in comparison with a conventional one. |
申请公布号 |
FR2851849(B1) |
申请公布日期 |
2006.12.08 |
申请号 |
FR20040001904 |
申请日期 |
2004.02.25 |
申请人 |
DENSO CORPORATION |
发明人 |
UENO MASATO;WATANABE YOSHIFUMI |
分类号 |
G01L9/00;H01L23/49;G01L9/06;H01L23/057;H01L23/24;H01L27/20;H01L29/84 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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