发明名称 FIELD EFFECT TRANSISTOR AMPLIFIER WITH LINEARIZATION
摘要 An amplifier comprises a source degeneration inductance (102) and at least two field effect transistors (104A, 104B) coupled in parallel(104A, 104B) and having mutually different gate biasing. Source connections of the field effect transistors are coupled along different positions (106A, 106B) of the source degeneration inductance (102).
申请公布号 KR20060126816(A) 申请公布日期 2006.12.08
申请号 KR20067018613 申请日期 2006.09.11
申请人 QUALCOMM INCORPORATED 发明人 APARIN VLADIMIR
分类号 H03F3/193;H03F1/22;H03F1/30;H03F1/32 主分类号 H03F3/193
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