CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

摘要

A CMOS image sensor and a method for manufacturing the same are provided to connect electrically a gate electrode and a floating diffusion region to each other by forming a conductive spacer on one sidewall of a gate electrode. A gate electrode is formed on an upper surface of a silicon substrate(200). A floating diffusion region(202) is formed within the substrate of one side of the gate electrode. A conductive spacer(206a) is formed on one sidewall of the gate electrode to connect the gate electrode and the floating diffusion region to each other. An interlayer dielectric(208) is formed on the entire surface including the gate electrode and the conductive spacer.