发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To achieve a continuous crystal growth without optical interference with a small laser irradiation apparatus. SOLUTION: A megahertz laser beam is used, a divided laser beam is irradiated at a semiconductor film, and the semiconductor film is crystallized. In this case, an optical path difference is provided in the partitioning beam, and suppresses the optical interference. The optical path difference is set more than the length corresponding to the pulse width of the megahertz laser beam to less than the length corresponding to the pulse oscillation spacing, and the optical interference can be suppressed with very short optical path difference. Therefore, there is no kinetic energy deterioration of the laser and the laser beam can be irradiated efficiently and continuously. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006332637(A) 申请公布日期 2006.12.07
申请号 JP20060124772 申请日期 2006.04.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;OISHI HIROMASA
分类号 H01L21/20;H01L21/02;H01L21/268;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L21/20
代理机构 代理人
主权项
地址