| 摘要 |
PROBLEM TO BE SOLVED: To minimize a gap between bit lines, while preventing increase in the capacitance between the bit lines and reducing the sensing time. SOLUTION: A forming method for the bit lines includes a step of forming a first metallic substance 14, in such a way that the metallic substance 14 fills drain contact holes on a semiconductor board 10 bearing semiconductor elements and grows to have a given thickness on a first interlayer insulating film 12; a step of forming first metal layers located at the odd order on a first metal wire and landing pads located between the first metal layers, by patterning the first metallic substance 14 formed to have the given thickness on the first interlayer insulating film 12; a step of forming trenches for exposing the landing pads by patterning a second interlayer insulating film 16, that has been formed over the entire result of formation of the first metal layer and landing pads; and a step of forming second metal layers 18 located at the even-numbered order on the first metal wire, by filling the trenches with a second metallic substance 18. COPYRIGHT: (C)2007,JPO&INPIT
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