发明名称 |
Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method |
摘要 |
A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
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申请公布号 |
US2006273356(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20040558063 |
申请日期 |
2004.05.21 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE |
发明人 |
MATSUMOTO KAZUHIKO;MUKASA KOICHI;ISHII ATSUSHI;TAKEDA SEIJI;SAWAMURA MAKOTO;SUBAGYO AGUS;HOSOI HIROTAKA;SUEOKA KAZUHISA;KIDA HIROSHI;SAKODA YOSHIHIRO |
分类号 |
H01L23/58;G01N27/414;H01L51/30 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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