发明名称 Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method
摘要 A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
申请公布号 US2006273356(A1) 申请公布日期 2006.12.07
申请号 US20040558063 申请日期 2004.05.21
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE 发明人 MATSUMOTO KAZUHIKO;MUKASA KOICHI;ISHII ATSUSHI;TAKEDA SEIJI;SAWAMURA MAKOTO;SUBAGYO AGUS;HOSOI HIROTAKA;SUEOKA KAZUHISA;KIDA HIROSHI;SAKODA YOSHIHIRO
分类号 H01L23/58;G01N27/414;H01L51/30 主分类号 H01L23/58
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