AN APPARATUS AND METHOD FOR DEPOSITING THIN FILM ON WAFER

摘要

An apparatus and a method for depositing a thin film on a wafer are provided to deposit the thin film without additional operations by a CVD(Chemical Vapor Deposition) method or an ALD(Atomic Layer Deposition) method. A wafer is loaded into a reaction receptacle(100). A source supply line(212) is connected to a source supply unit(210) to supply a source to the reaction receptacle. A first inert gas supply line(222) is used for supplying an inert gas to the source supply line. A reaction gas supply line(232) is used for connecting the reaction receptacle with a reaction gas supply unit(230). An exhaust line(300) is used for exhausting a gas within the reaction receptacle. A second inert gas supply line(242) is used for supplying the inert gas to the reaction gas supply line. A first bypass line(252) is used for connecting the source supply line with the exhaust line. A first and a second switching valves(V30,V31) are installed at the source supply line and the first bypass line, respectively. A second bypass line(262) is used for connecting the reaction gas supply line with the exhaust line. A third and fourth switching valves(V32,V33) are installed at the reaction gas supply line and the second bypass line, respectively.