发明名称 METHOD OF FORMING HETERO-JUNCTION IN ORGANIC SEMICONDUCTOR POLYMER
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a hetero-junction of adjacent first and second organic semiconductor polymer layers. <P>SOLUTION: First, a first organic semiconductor polymer layer 12 is formed on a substrate 10. Then, the solution of a film formation material is deposited on it. Since the first organic semiconductor polymer 12 is insoluble to this solution, it is not influenced. A temporary film 14 having a thickness of 20 nm is formed by drying. Then, the solution 16 of the second organic semiconductor polymer dissolved in an organic solvent is deposited on the above temporary film 14, and is made to dry. The thickness of the above temporary film 14 is set so that a part for the thickness may be permeated between the time durations by which the solution 15 of the above second organic semiconductor polymer is dried. Thereby, the temporary film 14 is decomposed without giving a damage to the first organic semiconductor polymer layer 12, and the second organic semiconductor layer 19 is formed so that it may touch on the above first organic semiconductor polymer layer 12. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006332636(A) 申请公布日期 2006.12.07
申请号 JP20060123033 申请日期 2006.04.27
申请人 SEIKO EPSON CORP 发明人 NEWSOME CHRISTOPHER;KUGLER THOMAS;LI SHUNPU;RUSSEL DAVID
分类号 H01L51/40;B41M5/00;B41M5/50;B41M5/52;H01L21/368;H01L29/786;H01L33/00;H01L51/00;H01L51/05;H01L51/42;H01L51/50;H05B33/10 主分类号 H01L51/40
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