发明名称 SEMICONDUCTOR DEVICE WITH CURRENT MIRROR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with a current mirror circuit capable of realizing a desired current mirror ratio even when a temperature gradient occurs in the semiconductor device. SOLUTION: In a layout of the circuit, a plurality of transistors A1-Ak, B1-Bm, C1-Cn prepared in each transistor groups A, B, C are not arranged in assembly every transistor groups A, B, C, but arranged alternately in order of the transistor groups A, B, C; and one among a plurality of the transistors A1-Ak constituting the transistor group A, one among a plurality of the transistors B1-Bm constituting the transistor group B, and one among a plurality of the transistors C1-Cn constituting the transistor group C (for example: transistor A1, B1, C1) are assembled one set, and the set is formed as a repeating pattern. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006332528(A) 申请公布日期 2006.12.07
申请号 JP20050157507 申请日期 2005.05.30
申请人 DENSO CORP 发明人 OTA KINGO;OKUDA KATSUICHI
分类号 H01L27/082;H01L21/822;H01L21/8222;H01L27/04 主分类号 H01L27/082
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