| 摘要 |
PROBLEM TO BE SOLVED: To form a metallic silicide layer having no facet shape, and to reduce a junction leakage between a source-drain and a silicon board. SOLUTION: The source-drain 5 is formed on the silicon board 1, and a metallic film (an Ni film) 6 for a silicification and a stress film 7 are formed on the source-drain 5. A laminated film composed of a TiN film and a Co film is formed as the stress film 7. When a silicification annealing is conducted under the state, the stress film 7 has a tensile stress 10a. The metallic film 6 for the silicification has a compressive stress 10b so as to correspond to the tensile stress. Accordingly, a reaction velocity is inhibited by silicification-reacting the metallic film 6 for the silicification with the silicon board 1. Consequently, an Ni mono-silicide layer (NiSi) having no facet shape can be formed. Accordingly, a junction leakage current between the source-drain 5 and the silicon board 1 can be reduced. COPYRIGHT: (C)2007,JPO&INPIT
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