| 摘要 |
PROBLEM TO BE SOLVED: To provide a sub-mount where the whole region of the bonding surface of a semiconductor laser chip can be bonded stably. SOLUTION: The sub-mount is provided with substrates 1 and 2, mainly consisting of Si, and impurity diffused layers 4 and 5 formed by having impurity diffuse in a region, over which the semiconductor laser chip has to be mounted in a substrate surface 1a. On the impurity diffused layer 5, a TiW layer 7, a Pt layer 11, an Au layer 8, and an AuSn layer 9 are laminated, in this order. The TiW layer 7 prevents diffusion of elements between the impurity diffused layers 4 and 5 and between the Au layer 8 and the AuSn layer 9. The thickness of the Pt layer 11 is set so that the Pt layer 11 remains, when the AuSn layer 9 for bonding the semiconductor chip is melted, according to the thickness of an Au electrode layer not shown and provided on the lower surface of the semiconductor laser chip, the thickness of the Au layer 8, the thickness and a composition ratio of the AuSn layer 9. COPYRIGHT: (C)2007,JPO&INPIT
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