| 摘要 |
A pixel is provided to prevent the generation of dark current in a photodiode by using an asymmetrical transfer gate channel doping. A pixel(30) comprises a substrate(32), a photodetector(34), a floating diffusion region(36), a transfer region between the photodetector and the floating diffusion region, a gate, a pinning layer, and a channel region. The gate partially overlapped with the photodetector is formed on the transfer region to transfer charges from the photodetector to the floating diffusion region. The pinning layer(46) is prolonged from the gate to the photodetector. The channel region(48) is formed from a center portion of the gate to the photodetector. The channel region is formed by using an asymmetrical first type ion implantation.
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