| 摘要 |
A semiconductor memory device is provided to control easily a driver transistor source voltage per a unit column by arranging a source voltage transfer line in each unit column. A semiconductor memory device comprises a second power line, a plurality of word lines, and a plurality of bit lines. The second power line(9b) is arranged in a column direction in each memory cell. The second power line crosses a first substrate region in each memory cell. The second power line is used for supplying a second power source voltage and contacting a first conductive node of a driver transistor of the corresponding memory cell. The plurality of word lines are arranged corresponding to each row of memory cells. The plurality of bit lines are arranged corresponding to each column of the memory cells.
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