SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a surge voltage when a switching element is off, and reducing an energy loss when the switching element is on. SOLUTION: A semiconductor device includes a p+-type layer 1, an n--type drift layer 2, a p--type base region 3, an n+-type emitter region 4, a trench 5 of a depth that penetrates the n+-type emitter region 4 and the p-type base region 3 from the surface of the p-type base region 3 and reaches the n--type drift layer 2, a gate electrode 7 embedded into the trench 5 through a gate insulating film 6, and an emitter electrode 8 electrically connected to a part of the p-type base region 3 and the n+-type emitter region 4. In IGBT of a so-called thinning-out structure, the curvature radius of the bottom 5a of the trench 5 is set at 0.5μm or less. In addition, in the gate insulating film 6, a part 6a on the side of a trench bottom is made thicker than a part 6b on the side of a trench side wall. COPYRIGHT: (C)2007,JPO&INPIT