| 摘要 |
A method for forming a metal line of a semiconductor device includes: forming an insulating layer on a substrate; sequentially forming a first barrier metal layer and a metal layer on the insulating layer; forming a second barrier metal layer on the metal layer; coating a photoresist on the second barrier metal layer and patterning the coated photoresist; exposing the first barrier metal layer by sequentially removing the second barrier metal layer and the metal layer using the patterned photoresist as a mask; removing the patterned photoresist; and removing the exposed first barrier metal layer using the second barrier metal layer and the metal layer as a mask.
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