METHOD FOR FORMING SOURCE LINE OF FLASH MEMORY DEVICE

摘要

A method for forming a source line in a flash memory device is provided to simplify the fabricating process by eliminating the necessity of a process for forming an isolating oxide layer for forming a source line. A silicon substrate(23) is etched by a predetermined depth to form a trench so that an active region and an isolation region are divided. A source mask is formed to expose a region for forming a source line. An ion implantation process is performed by using the source mask to form a source line(28) in the vicinity of the surface of the silicon substrate. The source line is formed in a direction crossing the active region and the isolation region.