| 摘要 |
A semiconductor device and method of its manufacturing method are provided for realizing smaller low voltage transistors while maintaining the characteristics of high voltage transistors. A first transistor formation region is separated by selectively leaving first element-separating insulator film (2). A second transistor formation region is separated by selectively oxidized second element-separating insulator film (3). On the region separated by first element-separating insulator film (2), a first transistor (Tr1) having a first channel-formation region, first source/drain regions (12, 13, 14), and first gate-insulation film (16) with a first film thickness and first gate electrode (17) are formed. On the region separated by second element-separating insulator film (3), second transistors (Tr3, Tr4) having a second channel-formation region, second source/drain region (32, 41), second gate-insulation film (33, 42) with thickness thinner than the first film thickness, and a second gate electrode (34, 43) are formed.
|
