| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve efficiency of light emission or photodetection in a long wavelength region, while making the lattice unconformity in an element as small as possible, and suppressing In composition to be comparatively small, for a III group nitride semiconductor element. <P>SOLUTION: An GaN layer 102, an AlGaN clad layer 103, an In<SB>0.07</SB>Ga<SB>0.33</SB>Ga<SB>0.6</SB>N/Al<SB>0.04</SB>Ga<SB>0.96</SB>N multiple quantum well active layer 104 and an AlGaN clad layer 105 are formed in this order on a substrate 101. The In<SB>0.07</SB>Ga<SB>0.33</SB>Ga<SB>0.6</SB>N layer has a composition lattice-matching the GaN layer 102. Forbidden band widths of the In<SB>0.07</SB>Ga<SB>0.33</SB>Ga<SB>0.6</SB>N layer and the Al<SB>0.04</SB>Ga<SB>0.96</SB>N layer are equal to each other. The In<SB>0.07</SB>Ga<SB>0.33</SB>Ga<SB>0.6</SB>N layer is lower than the Al<SB>0.04</SB>Ga<SB>0.96</SB>N layer, in the energy of lower end of a conduction band. In the active layer 104, electrons are sealed in the In<SB>0.07</SB>Ga<SB>0.33</SB>Ga<SB>0.6</SB>N layer, and holes are sealed in the Al<SB>0.04</SB>Ga<SB>0.96</SB>N layer, and the so-called "II quantum well structure" is constituted. <P>COPYRIGHT: (C)2007,JPO&INPIT |
