发明名称 DESIGN METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT AND DESIGN METHOD OF LIBRARY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a design technique of a semiconductor integrated circuit which restrains dispersion in a gate length due to optical proximity effect and a library design method which ensures characteristic of a cell. <P>SOLUTION: The design method of a semiconductor integrated circuit has a step (a) for setting a basic pattern constituted of a plurality of active regions/gate patterns having a gate and an active region, and a dummy gate taking a pattern of a gate adjacent to both sides of each gate into consideration; a step (b) for preparing a plurality of combined active regions/gate patterns by combining the basic pattern; and a step (c) for preparing a standard cell by combining a plurality of combined active regions/gate patterns. As an example of a plurality of active regions/gate patterns, a single transistor (wide) 51, a single transistor (narrow) 53, n-transistors (wide) 55 connected in parallel are mentioned. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006332348(A) 申请公布日期 2006.12.07
申请号 JP20050154110 申请日期 2005.05.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMASHITA KYOJI;TANIGUCHI HIROKI;OTANI KAZUHIRO;ARAI KATSUYA;IKOMA DAISAKU
分类号 H01L21/82;H01L21/8234;H01L27/088 主分类号 H01L21/82
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