发明名称 |
DESIGN METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT AND DESIGN METHOD OF LIBRARY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a design technique of a semiconductor integrated circuit which restrains dispersion in a gate length due to optical proximity effect and a library design method which ensures characteristic of a cell. <P>SOLUTION: The design method of a semiconductor integrated circuit has a step (a) for setting a basic pattern constituted of a plurality of active regions/gate patterns having a gate and an active region, and a dummy gate taking a pattern of a gate adjacent to both sides of each gate into consideration; a step (b) for preparing a plurality of combined active regions/gate patterns by combining the basic pattern; and a step (c) for preparing a standard cell by combining a plurality of combined active regions/gate patterns. As an example of a plurality of active regions/gate patterns, a single transistor (wide) 51, a single transistor (narrow) 53, n-transistors (wide) 55 connected in parallel are mentioned. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2006332348(A) |
申请公布日期 |
2006.12.07 |
申请号 |
JP20050154110 |
申请日期 |
2005.05.26 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMASHITA KYOJI;TANIGUCHI HIROKI;OTANI KAZUHIRO;ARAI KATSUYA;IKOMA DAISAKU |
分类号 |
H01L21/82;H01L21/8234;H01L27/088 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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