发明名称 |
Polymer for immersion lithography, photoresist composition containing the same, method of manufacturing a semiconductor device, and semiconductor device |
摘要 |
A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
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申请公布号 |
US2006275695(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20050304052 |
申请日期 |
2005.12.15 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG JAE C.;BOK CHEOL K.;LIM CHANG M.;MOON SEUNG C. |
分类号 |
G03C1/00 |
主分类号 |
G03C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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