| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high purity silicon ingot with a good yield. SOLUTION: A casting mold for forming the silicon ingot has a releasing layer on its inner surface. The releasing layer is formed by sequentially forming a first layer 2 comprising silicon nitride and silicon dioxide, wherein the ratio of the silicon dioxide is 0-80 wt.%, on the inner surface of the casting mold and a second layer 3 comprising only silicon dioxide. COPYRIGHT: (C)2007,JPO&INPIT
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