发明名称 PHOTOMASK CORRECTION METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a highly accurate drift correction method with which a photomask is scarcely damaged, by solving problems associated with the conventional photomask correction method using a one-point-drift correction such as occurrence of a scan damage on a place other than a place with a defect on the photomask, inability to open any pin hole in the case of a fine pattern, and so on. <P>SOLUTION: Without forming any mark for measuring a drift, such as the pin hole, the correction to keep a beam irradiation position constant is conducted by calculating a produced drift amount by: utilizing the defect 3 and information of a pattern CAD as marks; and using the defect 3 to be corrected or a pattern on the periphery of the defect as reference positions in correcting the defect 3 with a suitable frequency. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006330017(A) 申请公布日期 2006.12.07
申请号 JP20050148928 申请日期 2005.05.23
申请人 SII NANOTECHNOLOGY INC 发明人 MIZUSHIMA TAKATOMO
分类号 G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/72
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