| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device eliminating an occurrence of a surface roughness of a bunching step or the like to sufficiently improve an activation rate of an impurity-injection layer. SOLUTION: The method for manufacturing the silicon carbide semiconductor device comprises steps of: preparing a silicon carbide substrate; implanting an impurity ion to the silicon carbide substrate; and heat treating the silicon carbide substrate. The heat treatment step is conducted in an atmosphere of a mixed gas of a hydrogen gas and an alkyl series hydrocarbon gas. The alkyl series hydrocarbon gas comprises, for instance, a propane gas. COPYRIGHT: (C)2007,JPO&INPIT |
