| 摘要 |
PROBLEM TO BE SOLVED: To provide a pull-up method capable of inexpensively growing a silicon single crystal having uniform oxygen concentration distribution. SOLUTION: This method for production of the silicon single crystal is based on the Czochralski process comprising the application of magnetic field to a melt in a crucible. The magnetic field is applied to the melt in the range of magnetic field intensity of from 500 to 1,000 gauss in a zone before the growth of a straight trunk part after neck part growth, the intensity is gradually decreased to 200-400 gauss in a zone to the length of the straight trunk part of 150-250 mm immediately after the trunk part growth, and further the magnetic field is applied to the melt in the intensity range of from 350 to 500 gauss in the zone of the trunk part length of 150-250 mm or more. COPYRIGHT: (C)2007,JPO&INPIT
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