发明名称 Ultraviolet curing process for low k dielectric films
摘要 Processes for forming a low k dielectric material onto a surface of a substrate comprises depositing the low k dielectric material onto the surface; and exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a mechanical property of the low k dielectric material, wherein the mechanical property is significantly improved compared to a corresponding mechanical property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy comprises an excessive hotplate bake sequence, a furnace cure, an annealing cure, a multi-temperature cure process or plasma treatment prior to the ultraviolet radiation.
申请公布号 US2006274405(A1) 申请公布日期 2006.12.07
申请号 US20060446052 申请日期 2006.06.02
申请人 发明人 WALDFRIED CARLO;ESCORCIA ORLANDO;BEYER GERALD;IACOPI FRANCESCA
分类号 F21V9/04 主分类号 F21V9/04
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