| 摘要 |
The present invention provides a variable-resistance element in which deterioration in its capacity for resistance variation is suppressed, even when heat treatment is conducted in a reducing atmosphere, and a non-volatile memory using the same. Specifically, the present invention provides (1) a variable-resistance element provided with a material layer comprising an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO<SUB>3 </SUB>(wherein R is a rare-earth element and M is an alkaline-earth element) and first and second electrodes electrically connecting to the material layer, the resistance of the material layer being variable in accordance with an electric current or voltage applied across the first and second electrodes, and (2) a non-volatile memory comprising a transistor and the variable-resistance element, the transistor and the variable-resistance element being electrically connected.
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