| 发明名称 |
A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same |
| 摘要 |
Seeds are implanted in a regular pattern upon an undersubstrate. An Al<SUB>x</SUB>In<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N (0<=x<=1, 0<=y<=1, 0<x+y<=1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
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| 申请公布号 |
US2006273343(A1) |
申请公布日期 |
2006.12.07 |
| 申请号 |
US20060501817 |
申请日期 |
2006.08.10 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAHATA SEIJI;HIROTA RYU;MOTOKI KENSAKU;OKAHISA TAKUJI;UEMATSU KOUJI |
| 分类号 |
H01L33/00;C30B25/02;C30B25/18;C30B29/40;H01L21/20 |
主分类号 |
H01L33/00 |
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