摘要 |
In a photocatalyst article containing an oxide semiconductor, a photocatalyst article containing a compound, which contains at least one type of element selected from the group comprised of Mg, Sc, V, Cr, Mn, Y, Nb, Mo, Ru, W, and Re, at a content such that the ratio (A/B) of the number of metal atoms of the abovementioned element (A) to the number of atoms of metal that comprise the abovementioned oxide semiconductor (B) will be 0.20 to 2. This photocatalyst article exhibits high photocatalytic activity even in environments illuminated by weak ultraviolet light or visible light, expresses excellent anti-fogging and anti-soiling properties, and retains good anti-fogging and anti-soiling performance over long periods. This photocatalyst article therefore has a high utilization value as an anti-fogging, anti-soiling articles. |