| 摘要 |
<p>A photomask, a manufacturing method thereof, and a photolithography method using the same are provided to improve efficiency of an exposing apparatus by converting design data of a pattern image of the photomask or rotating and arranging the photomask. A photomask(10') includes a pattern image(11') generated from design data that is result from a 90 degree rotated design data of a conventional pattern image. A length of a diagonal line of a target image(100') is less than that of an available exposure field(21) of an exposing apparatus. A horizontal size of the target image is not exceeded to a horizontal length of the available exposure field. A relative long side of the target image is arranged to a vertical direction of the available exposure field. Therefore, the whole target image is arranged within the available exposure field.</p> |
