发明名称 |
LOW-LOSS SUBSTRATE FOR HIGH QUALITY COMPONENTS |
摘要 |
Methods and apparatus providing high quality factor (Q) components on low loss substrates. A substrate is fabricated having a plurality of substrate support elements. A bridging layer is formed on the substrate that is supported by the support elements. A component is formed on the bridging layer. CMOS-compatible processing of silicon substrates may be used. One or more cavities comprising high aspect-ratio trenches may be formed using a low-temperature fabrication sequence which reduces the high-frequency losses in silicon at RF frequencies. The cavities (trenches) are subsequently bridged over or refilled with a dielectric to close the open areas and create a rigid low-loss structure. The structures mechanically-robust and are compatible with any packaging technology. An exemplary one-turn 0.8 nH inductor fabricated on trenched silicon support elements exhibited a very high peak Q of 70.6 at 8.75 GHz with a self-resonant frequency larger than 15 GHz.
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申请公布号 |
WO2006014397(A3) |
申请公布日期 |
2006.12.07 |
申请号 |
WO2005US23692 |
申请日期 |
2005.06.30 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
AYAZI, FARROKH;RAIESZADEH, MINA |
分类号 |
H01L29/00;H01L29/76;H01L29/94 |
主分类号 |
H01L29/00 |
代理机构 |
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