METHOD FOR MANUFACTURING PHOTOMASK, EXPOSURE METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask and an exposure method taking into consideration the influence of aberration.

SOLUTION: A shifter film 52 to control the transmittance and the phase angle of transmitting exposure light is formed on a transparent substrate 51 made of quartz or the like. The material of the shifter film 52 is, for example, MoSiO, MoSiON, CrO and CrON. A resist film 53 is used as a mask to etch the shifter film 52 by reactive ion etching using CF4+O2gas for MoSiO and MoSION or using Cl2CO2gas for CrO and CrON to form a light transmitting portion 852 corresponding to an auxiliary measurement pattern. Then the resist film 53 is removed to complete the photomask 50.

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