IN-SITU PROFILE MEASUREMENT IN ELECTROPLATING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a plated film having a uniform profile on a substrate in a process for electroplating a semiconductor, by measuring a thickness of an electroconductive seed layer formed on the substrate in real time. SOLUTION: This profile measurement method comprises the steps of: starting electroplating when the substrate contacts with an electrolytic solution; measuring a series of current distributions in the electrolytic solution in a cell; forming the profile of the thickness of the plated film in real-time from a series of the current distributions in the cell; and adjusting a treatment parameter in accordance with the profile. COPYRIGHT: (C)2007,JPO&INPIT