摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of a drawback by relieving a stress on a semiconductor bare chip due to a filler in a composite material, in a semiconductor device in which another chip or substrate is oppositely stacked on a circuit formation surface side of the semiconductor bare chip and the composite material joins them. SOLUTION: In a semiconductor device 1 formed by stacking an MEMS chip 2 on a silicon semiconductor chip 3, protective layers 7 and 8 are interposed between the chips 2 and 3 when circuit formation surfaces of the chips 2 and 3 oppose with each other and electrodes are connected by a conductive minute projection 4 and the composite material 5 capable of obtaining sufficient strength at a low curing temperature and a low linear expansion coefficient is filled between the chips 2 and 3 to join them. Accordingly, a hard filler 10 in the composite material 5 is prevented from damaging the surface of the chips 2 and 3, and thus, the reliability of the semiconductor device 1 can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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